Wonik Materials

R&D

About the lab

Research areas

Specialty Gas

Hydrogen

Precursors

R&D STATUS

We focus on the development of various precursor synthesis and purification technologies and their associated deposition processes, which are essential to the semiconductor manufacturing process. In particular, we are focusing on the development of ALD/CVD precursors for depositing various thin films such as dielectrics and metals, and are striving to secure new growth engines for future food creation through VOC-centered product development.

Key research areas

Precursor synthesis/purification and process development

High-k (Zr, Hf, Ti) and low-k, Si (Amino Silane, Halo Silane, Higher Silane), Metal (Mo, Co, Ru) precursor synthesis/purification and deposition process (ALD, CVD)

Precursor R&D for Semiconductor Devices

Precursor researches and develops various precursors and process solutions used in manufacturing semiconductor devices.
We are specially focusing on ALD/CVD precursors to deposit various films such as dielectrics, metals, semiconductors, and etc.
Our laboratory is doing the best to provide the differentiated products and solutions to meet various customer's needs.

Lists of products

Completed Development Product

DIS, BDIPADS, Ru(EtCp)2, CpCo(CO)2, CCTBA, TDMAT, Star-Ti, TEMAZT, TEMAHF, MoO2Cl2

Completed Development Product

DIS

- Development of gate spacer for highly conformal thin films

MoO2Cl2

DIS

- Development of Word line for Fluorine Free Tungsten
- Low resistivity a thin film

Precursor	Structure	Properties		Application
DIS		Molecular Weight (g/mol)	283.91	GAA gate spacer - SiN thin films -Stable vapor phase -Highly conformal thin films
		Phase	Liquid
		Boiling Point (C)	149-150
		Melting Point (°C)	-1
		Vapor Pressure	55°C(@25Torr)
MoO2Cl2		Molecular Weight (g/mol)	198.84	Word line Metal in 3D NAND -Fluorine Free Tungsten -Low resistivity a thin film
		Phase	Solid
		Melting Point (°C)	175
		Decomposition Point (°C)	428

특허명	출원일	출원번호	등록번호
이중치환 사이클로펜타디엔 화합물, 유기금속 화합물 및 그 제조방법	2018-08-27	10-2018-0100348	10-2080218
사이클로펜타디엔이 도입된 유기금속 화합물 전구체를 이용한 유전체 필름의 형성 방법 및 그 의반도체 제조에서의 용도	2019-12-23	10-2019-0173338	10-2259874
아미노실란계 전구체 기반의 소수성 박막 형성 방법	2019-01-03	10-2019-0000628	10-2273964
신규한 루테늄 화합물, 이의 제조방법, 이를 포함히는 박막 형성용 원료, 및 이를 이용하여 고순도 루테늄 박막을 형성하는 방법	2020-10-08	10-2020-0130117	10-2519909
저온에서의 실리콘-함유 박막 형성방법	2017-01-25	10-2017-0012290	10-1934773
루테늄 박막의 선택적 증작 방법	2020-11-27	10-2020-0162296	10-2536802